Resonant features of the terahertz generation in semiconductor nanowires

Journal Article · Thu Dec 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616120241· OSTI ID:22645292

Bouravleuv, A. D. ^[1]; Mustafin, I. A. ^[2]; Cirlin, G. E. ^[1]; Kuritsyn, D. I.; Rumyantsev, V. V. ^[3]; Morosov, S. V. ^[1]; Kakko, J. P.; Huhtio, T.; Lipsanen, H. ^[4]

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1. Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Centre (Russian Federation)
2. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
3. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
4. Aalto University, Department of Micro- and Nanosciences, Micronova (Finland)

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

• OSTI ID: 22645292
• Journal Information: Semiconductors, Vol. 50, Issue 12; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
EXCITATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
NANOWIRES
P-TYPE CONDUCTORS
THZ RANGE