Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm

Journal Article · Thu Dec 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616120125· OSTI ID:22645274

Rumyantsev, V. V.; Ikonnikov, A. V.; Bovkun, L. S. ^[1]; Chizhevskii, E. G.; Zasavitskii, I. I. ^[2]; Gavrilenko, V. I. ^[1]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

Diffusion injection lasers based on Pb{sub 1} {sub –} {sub x}Sn{sub x}Se alloy, emitting in a wide spectral range of 10–46.5 μm depending on the composition and temperatures are fabricated. A technology for growing high-quality single crystals from the vapor phase under conditions of free growth is developed. The dependences of the total emission intensity on the pump current and the emission spectra of injection lasers based on Pb{sub 1–x}Sn{sub x}Se are studied. In these samples, lasing of long-wavelength radiation to a record wavelength of 46.5 μm is achieved.

• OSTI ID: 22645274
• Journal Information: Semiconductors, Vol. 50, Issue 12; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CONCENTRATION RATIO
DIFFUSION
EMISSION
EMISSION SPECTRA
LASERS
LEAD COMPOUNDS
MONOCRYSTALS
TIN SELENIDES
VAPORS
WAVELENGTHS