Polarization of the induced THz emission of donors in silicon

Journal Article · Thu Dec 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616120101· OSTI ID:22645273

Zhukavin, R. Kh.; Tsyplenkov, V. V. ^[1]; Pavlov, S. G.; Hübers, H. -W. ^[2]; Abrosimov, N. V.; Shastin, V. N. ^[3]

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1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Humboldt University of Berlin (Germany)
3. Leibniz Institute for Crystal Growth (Germany)

The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO{sub 2} laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.

• OSTI ID: 22645273
• Journal Information: Semiconductors, Vol. 50, Issue 12; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
ARSENIC
BISMUTH
CARBON DIOXIDE LASERS
CRYSTAL STRUCTURE
DEFORMATION
MONOCRYSTALS
PHOSPHORUS
PHOTOIONIZATION
PHOTONS
POLARIZATION
PUMPING
SILICON
STIMULATED EMISSION