Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

Journal Article · Wed Mar 15 00:00:00 EDT 2017 · Crystallography Reports

DOI:https://doi.org/10.1134/S106377451702016X· OSTI ID:22645205

Myakon’kikh, A. V. ^[1]; Chesnokov, Yu. M. ^[2]; Shemukhin, A. A.; Oreshko, A. P. ^[3]

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1. Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation)
2. National Research Centre “Kurchatov Institute” (Russian Federation)
3. Moscow State University (Russian Federation)

The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2–5 keV and a dose of 5 × 10{sup 17} cm{sup –2} have been investigated using high-resolution X-ray reflectivity, Rutherford backscattering, and transmission electron microscopy. The electron density depth profile in the surface layer formed by helium ions is obtained, and its elemental and phase compositions are determined. This layer is found to have a complex structure and consist of an upper amorphous sublayer and a layer with a porosity of 30–35% beneath. It is shown that the porous layer has the sharpest boundaries at a lower energy of implantable ions.

• OSTI ID: 22645205
• Journal Information: Crystallography Reports, Vol. 62, Issue 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON DENSITY
HELIUM IONS
LAYERS
POROUS MATERIALS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
TRANSMISSION ELECTRON MICROSCOPY