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Title: Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor

Abstract

The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 10{sup 18} cm{sup –3} on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Institute of Physics, Dagestan Scientific Center (Russian Federation)
Publication Date:
OSTI Identifier:
22617047
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 124; Journal Issue: 3; Other Information: Copyright (c) 2017 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HALL EFFECT; IMPURITIES; INDIUM ARSENIDES; MAGNETIC SEMICONDUCTORS; MAGNETIC SUSCEPTIBILITY; MANGANESE ADDITIONS; MONOCRYSTALS; PRESSURE RANGE GIGA PA; P-TYPE CONDUCTORS

Citation Formats

Arslanov, R. K., E-mail: arslanovr@gmail.com, Arslanov, T. R., and Daunov, M. I. Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor. United States: N. p., 2017. Web. doi:10.1134/S1063776117020017.
Arslanov, R. K., E-mail: arslanovr@gmail.com, Arslanov, T. R., & Daunov, M. I. Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor. United States. doi:10.1134/S1063776117020017.
Arslanov, R. K., E-mail: arslanovr@gmail.com, Arslanov, T. R., and Daunov, M. I. Wed . "Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor". United States. doi:10.1134/S1063776117020017.
@article{osti_22617047,
title = {Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor},
author = {Arslanov, R. K., E-mail: arslanovr@gmail.com and Arslanov, T. R. and Daunov, M. I.},
abstractNote = {The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 10{sup 18} cm{sup –3} on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.},
doi = {10.1134/S1063776117020017},
journal = {Journal of Experimental and Theoretical Physics},
number = 3,
volume = 124,
place = {United States},
year = {Wed Mar 15 00:00:00 EDT 2017},
month = {Wed Mar 15 00:00:00 EDT 2017}
}