Anomalous Hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor
Journal Article
·
· Journal of Experimental and Theoretical Physics
- Russian Academy of Sciences, Institute of Physics, Dagestan Scientific Center (Russian Federation)
The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 10{sup 18} cm{sup –3} on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.
- OSTI ID:
- 22617047
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 124, Issue 3; Other Information: Copyright (c) 2017 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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