3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

Journal Article · Sun May 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4950771· OSTI ID:22611712

Li, Chi-Kang; Wu, Chen-Kuo; Hsu, Chung-Cheng; Lu, Li-Shuo; Wu, Yuh-Renn ^[1]; Li, Heng; Lu, Tien-Chang ^[2]

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1. Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan (China)
2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)

In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our results show that the hole current is not only from top into lateral quantum wells (QWs) but flowing through shallow sidewall QWs and then injecting into the deeper lateral QWs in V-pit structures, where the V-pit geometry provides more percolation length for holes to make the distribution uniform along lateral MQWs. The IQE behavior with different V-pit sizes, threading dislocation densities, and current densities were analyzed. Substantially, the variation of the quantum efficiency for different V-pit sizes is due to the trap-assisted nonradiative recombination, effective QW ratio, and ability of hole injections.

• OSTI ID: 22611712
• Journal Information: AIP Advances, Vol. 6, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CURRENT DENSITY
CURRENTS
DIFFUSION
DISLOCATIONS
DISTRIBUTION
GALLIUM NITRIDES
INJECTION
LIGHT EMITTING DIODES
QUANTUM EFFICIENCY
QUANTUM WELLS
RECOMBINATION
SPECTROSCOPY
STRESSES
THREE-DIMENSIONAL CALCULATIONS
THREE-DIMENSIONAL LATTICES
TRAPS
VISIBLE RADIATION