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Title: Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress

Abstract

Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons.

Authors:
; ; ; ; ; ; ; ; ; ;  [1]
  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22611667
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 6; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APPROXIMATIONS; BINDING ENERGY; CRYOSTATS; EMISSION; EXCITONS; FINE STRUCTURE; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTONS; QUANTUM DOTS; QUANTUM ENTANGLEMENT; RED SHIFT; STRESSES; SYMMETRY; TUNING

Citation Formats

Su, Dan, Dou, Xiuming, Wu, Xuefei, Liao, Yongping, Zhou, Pengyu, Ding, Kun, Ni, Haiqiao, Niu, Zhichuan, Zhu, Haijun, Jiang, Desheng, and Sun, Baoquan. Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress. United States: N. p., 2016. Web. doi:10.1063/1.4946850.
Su, Dan, Dou, Xiuming, Wu, Xuefei, Liao, Yongping, Zhou, Pengyu, Ding, Kun, Ni, Haiqiao, Niu, Zhichuan, Zhu, Haijun, Jiang, Desheng, & Sun, Baoquan. Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress. United States. https://doi.org/10.1063/1.4946850
Su, Dan, Dou, Xiuming, Wu, Xuefei, Liao, Yongping, Zhou, Pengyu, Ding, Kun, Ni, Haiqiao, Niu, Zhichuan, Zhu, Haijun, Jiang, Desheng, and Sun, Baoquan. Fri . "Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress". United States. https://doi.org/10.1063/1.4946850.
@article{osti_22611667,
title = {Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress},
author = {Su, Dan and Dou, Xiuming and Wu, Xuefei and Liao, Yongping and Zhou, Pengyu and Ding, Kun and Ni, Haiqiao and Niu, Zhichuan and Zhu, Haijun and Jiang, Desheng and Sun, Baoquan},
abstractNote = {Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons.},
doi = {10.1063/1.4946850},
url = {https://www.osti.gov/biblio/22611667}, journal = {AIP Advances},
issn = {2158-3226},
number = 4,
volume = 6,
place = {United States},
year = {2016},
month = {4}
}