Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons.
- OSTI ID:
- 22611667
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 4 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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