Pressure induced increase of the exciton phonon interaction in ZnO/(ZnMg)O quantum wells
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/34, 02-668 Warsaw (Poland)
It is a well-established experimental fact that exciton-phonon coupling is very efficient in ZnO. The intensities of the phonon-replicas in ZnO/(ZnMg)O quantum structures strongly depend on the internal electric field. We performed high-pressure measurements on the single ZnO/(ZnMg)O quantum well. We observed a strong increase of the intensity of the phonon-replicas relative to the zero phonon line. In our opinion this effect is related to pressure induced increase of the strain in quantum structure. As a consequence, an increase of the piezoelectric component of the electric field is observed which leads to an increase of the intensity of the phonon-replicas.
- OSTI ID:
- 22611592
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 3 Vol. 6; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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