Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Journal Article · Mon Aug 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4961379· OSTI ID:22611411

Jeong, Jaewook ^[1]; Kim, Joonwoo; Jeong, Soon Moon ^[2]; Kim, Donghyun; Hong, Yongtaek ^[3]; Jeon, Heonsu ^[4]

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1. School of Information and Communication Engineering, Chungbuk National University, Cheongju (Korea, Republic of)
2. Division of Nano and Energy Convergence Research, Daegu Gyeongbuk Institute of Science and Technology, Daegu (Korea, Republic of)
3. Department of Electrical and Communication Engineering, Seoul National University, Seoul (Korea, Republic of)
4. Department of Physics & Astronomy, Seoul National University, Seoul (Korea, Republic of)

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

• OSTI ID: 22611411
• Journal Information: AIP Advances, Vol. 6, Issue 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
CARRIER MOBILITY
COMPARATIVE EVALUATIONS
GALLIUM COMPOUNDS
HOLOGRAPHY
INDIUM COMPOUNDS
LAYERS
OXYGEN COMPOUNDS
PERIODICITY
THIN FILMS
TRANSISTORS
ZINC COMPOUNDS
ZINC OXIDES