skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Abstract

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70 μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.

Authors:
; ; ; ;  [1]; ; ; ;  [2];  [3];  [1];  [4];  [1];  [5]
  1. Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)
  2. National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore)
  3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)
  4. (Singapore)
  5. (United States)
Publication Date:
OSTI Identifier:
22611384
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CRYSTAL GROWTH; DISLOCATIONS; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM COMPOUNDS; LAYERS; METALS; ORGANOMETALLIC COMPOUNDS; ROUGHNESS; SILICON; STRAINS; SUBSTRATES; SURFACES; TRANSISTORS; VAPOR PHASE EPITAXY; VAPORS

Citation Formats

Kohen, David, E-mail: david.kohen@asm.com, Nguyen, Xuan Sang, Made, Riko I, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yadav, Sachin, Kumar, Annie, Gong, Xiao, Yeo, Yee Chia, Heidelberger, Christopher, Yoon, Soon Fatt, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Fitzgerald, Eugene A., and Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer. United States: N. p., 2016. Web. doi:10.1063/1.4961025.
Kohen, David, E-mail: david.kohen@asm.com, Nguyen, Xuan Sang, Made, Riko I, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yadav, Sachin, Kumar, Annie, Gong, Xiao, Yeo, Yee Chia, Heidelberger, Christopher, Yoon, Soon Fatt, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Fitzgerald, Eugene A., & Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer. United States. doi:10.1063/1.4961025.
Kohen, David, E-mail: david.kohen@asm.com, Nguyen, Xuan Sang, Made, Riko I, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yadav, Sachin, Kumar, Annie, Gong, Xiao, Yeo, Yee Chia, Heidelberger, Christopher, Yoon, Soon Fatt, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Fitzgerald, Eugene A., and Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. 2016. "Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer". United States. doi:10.1063/1.4961025.
@article{osti_22611384,
title = {Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer},
author = {Kohen, David, E-mail: david.kohen@asm.com and Nguyen, Xuan Sang and Made, Riko I and Lee, Kwang Hong and Lee, Kenneth Eng Kian and Yadav, Sachin and Kumar, Annie and Gong, Xiao and Yeo, Yee Chia and Heidelberger, Christopher and Yoon, Soon Fatt and School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 and Fitzgerald, Eugene A. and Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139},
abstractNote = {We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70 μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.},
doi = {10.1063/1.4961025},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = 2016,
month = 8
}
  • The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect aremore » studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.« less
  • Effects of postgrowth rapid thermal annealing (RTA) on structural and electrical properties of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.52}Ga{sub 0.48}As metamorphic high-electron-mobility transistor (MHEMT) structure grown on a GaAs substrate utilizing a compositionally graded InAlAs/InGaAlAs buffer layer were investigated. High-resolution triple-axis x-ray diffraction, photoluminescence, and van der Pauw-Hall measurements were used for the investigation. While the RTA improved the structural property of the MHEMT, it degraded the channel mobility of the MHEMT due to defect-assisted impurity redistribution.
  • The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less
  • AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less
  • We investigated the effects of high temperature ({approx}700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and {delta}-doping layers of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth ofmore » high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties.« less