skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Abstract

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70 μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.

Authors:
; ; ; ;  [1]; ; ; ;  [2];  [3];  [1];  [4];  [1];  [5]
  1. Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)
  2. National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore)
  3. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)
  4. (Singapore)
  5. (United States)
Publication Date:
OSTI Identifier:
22611384
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CRYSTAL GROWTH; DISLOCATIONS; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM COMPOUNDS; LAYERS; METALS; ORGANOMETALLIC COMPOUNDS; ROUGHNESS; SILICON; STRAINS; SUBSTRATES; SURFACES; TRANSISTORS; VAPOR PHASE EPITAXY; VAPORS

Citation Formats

Kohen, David, E-mail: david.kohen@asm.com, Nguyen, Xuan Sang, Made, Riko I, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yadav, Sachin, Kumar, Annie, Gong, Xiao, Yeo, Yee Chia, Heidelberger, Christopher, Yoon, Soon Fatt, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Fitzgerald, Eugene A., and Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer. United States: N. p., 2016. Web. doi:10.1063/1.4961025.
Kohen, David, E-mail: david.kohen@asm.com, Nguyen, Xuan Sang, Made, Riko I, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yadav, Sachin, Kumar, Annie, Gong, Xiao, Yeo, Yee Chia, Heidelberger, Christopher, Yoon, Soon Fatt, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Fitzgerald, Eugene A., & Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer. United States. doi:10.1063/1.4961025.
Kohen, David, E-mail: david.kohen@asm.com, Nguyen, Xuan Sang, Made, Riko I, Lee, Kwang Hong, Lee, Kenneth Eng Kian, Yadav, Sachin, Kumar, Annie, Gong, Xiao, Yeo, Yee Chia, Heidelberger, Christopher, Yoon, Soon Fatt, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Fitzgerald, Eugene A., and Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139. Mon . "Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer". United States. doi:10.1063/1.4961025.
@article{osti_22611384,
title = {Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer},
author = {Kohen, David, E-mail: david.kohen@asm.com and Nguyen, Xuan Sang and Made, Riko I and Lee, Kwang Hong and Lee, Kenneth Eng Kian and Yadav, Sachin and Kumar, Annie and Gong, Xiao and Yeo, Yee Chia and Heidelberger, Christopher and Yoon, Soon Fatt and School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 and Fitzgerald, Eugene A. and Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139},
abstractNote = {We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70 μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.},
doi = {10.1063/1.4961025},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}