Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy

Journal Article · Fri Jun 17 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4954339· OSTI ID:22609115

Petrov, Yu.; Vyvenko, O. ^[1]

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1. V.A. Fok Institute of Physics, St. Petersburg State University (Russian Federation)

The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

• OSTI ID: 22609115
• Journal Information: AIP Conference Proceedings, Vol. 1748, Issue 1; Conference: STRANN 2016: 5. international conference on state-of-the-art trends of scientific research of artificial and natural nanoobjects, St. Petersburg (Russian Federation), 26-29 Apr 2016; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BACKSCATTERING
ELECTRIC POTENTIAL
ELECTRONS
FILMS
GOLD
NANOPARTICLES
NANOSTRUCTURES
PLASMONS
SCANNING ELECTRON MICROSCOPY
SCATTERING