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Title: Enhanced dielectric, impedance and magnetic characteristics of Co doped multiferroic Bi{sub 2}Fe{sub 4}O{sub 9}

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4948056· OSTI ID:22608799
;  [1];  [2]
  1. Department of Physics and Astronomy, National Institute of Technology, Rourkela-769008, Odisha (India)
  2. UGC-DAE Consortium for Scientific Research Mumbai Centre, R-5 Shed, BARC, Mumbai-400085 (India)

Multiferroic Bi{sub 2}Fe{sub 4(1-x)}Co{sub 4x}O{sub 9} (x = 0, 0.05) were prepared by conventional solid state reaction route. X-ray diffraction (XRD) result indicated the decrease in lattice parameters due to 5% Co doping. Grain growth in the doped composition was confirmed from surface morphology characterization. Frequency dependent real part of dielectric constant (ε′) at room temperature showed an enhancement of ~70% in doped sample at 1 kHz. A decrease in peak height with doping was noticed from the modulus study. Lastly, room temperature M-H measurement upto 9 T showed induced ferromagnetism in Bi{sub 2}Fe{sub 4}O{sub 9} due to 5% Co doping. The values of remnant magnetization (M{sub r}) and coercive field (H{sub c}) in Bi{sub 2}Fe{sub 3.8}Co{sub 0.2}O{sub 9} was found to be 0.007 µ{sub B}/f.u. and 0.295 kOe respectively.

OSTI ID:
22608799
Journal Information:
AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English