Numerical investigations on hot-zone modified DS furnace for mc-Si growth process
A transient global numerical model has been carried out to simulate the multi-crystalline silicon growth process by the directional solidification method using CGSim 15.1. A two dimensional axisymmetric model was used. The conductive, convective, and radiative heat transfer problems were coupled with our model and these problems were solved iteratively using the finite volume method. In the present work we have modified the heater element to produce a high quality ingot from multi-crystalline silicon. The change has been made to control the temperature distribution. By controlling the temperature distribution, we can also control the melt crystal interface of the ingot. The shape of the melt-crystal interface of the ingot, the temperature distribution in the crucible and the heat flux from the melt as well as from the crystal have been studied. Finally, the simulation results show that the modification in the heater element keeps the melt-crystal interface as planar in the DS system, also it gives better results than conventional system.
- OSTI ID:
- 22608797
- Journal Information:
- AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AXIAL SYMMETRY
CRUCIBLES
CRYSTAL GROWTH
CRYSTALS
FURNACES
HEAT
HEAT FLUX
HEAT TRANSFER
INTERFACES
ITERATIVE METHODS
MODIFICATIONS
POLYCRYSTALS
SILICON
SIMULATION
SOLIDIFICATION
TEMPERATURE DISTRIBUTION
TRANSIENTS
TWO-DIMENSIONAL CALCULATIONS