Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947961· OSTI ID:22608726

Surender, S.; Pradeep, S.; Ramesh, R.

In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm{sup 2} which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×10{sup 17}cm{sup −3} and resistivity of 1.7 Ωcm at room temperature.

• OSTI ID: 22608726
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRICAL PROPERTIES
FLOW RATE
GALLIUM NITRIDES
MAGNESIUM
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
RESOLUTION
ROUGHNESS
SAPPHIRE
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TWO-DIMENSIONAL CALCULATIONS
X-RAY DIFFRACTION