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Title: Annealing induced structural changes in amorphous Co{sub 23}Fe{sub 60}B{sub 17} film on Mo buffer layer

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4947953· OSTI ID:22608722
;  [1]; ; ;  [2];  [3]
  1. School of Physics, Devi Ahilya University, Khandwa Road, Indore-452001 (India)
  2. Amity Center for Spintronic Materials, Amity University UP, Sector 125, Noida 201 313 (India)
  3. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India)

Structural changes occurring in a thin amorphous Co{sub 23}Fe{sub 60}B{sub 17} film sandwiched between two Mo layers, as a function of thermal annealing has been studied. Thermal stability of the Co{sub 23}Fe{sub 60}B{sub 17} film is found to be significantly lower than the bulk ribbons. SIMS measurements show that during crystallization, boron which is expelled out of the crystallites, has a tendency to move towards the surface. No significant diffusion of boron in Mo buffer layer is observed. This result is in contrast with some earlier studies where it was proposed that the role of buffer layer of refractory metal is to absorb boron which is expelled out of the bcc FeCo phase during crystallization.

OSTI ID:
22608722
Journal Information:
AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English