Role of laser energy density on growth of highly oriented topological insulator Bi{sub 2}Se{sub 3} thin films
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India)
Topological insulators (TIs) are very promising in the field of nanoelectronics due to their exotic properties. Bismuth Selenide, a 3D Topological insulator is considered as reference TI owing to its simple band structure and large bandgap. However, the presence of unintentional doping, which masks the metallic surface states, is still a major concern. In this work, we report the effect of laser energy density on the growth of highly oriented and stoichiometric thin films of Bi{sub 2}Se{sub 3} by pulsed laser deposition (PLD). Structural characterizations by X-ray diffraction (XRD) and Raman Spectroscopy confirms the c-axis orientation and good crystallinity of films. Atomic force microscopy (AFM) study shows the increase in average grain size and rms roughness (from 3.1 nm to 5.1 nm) with the decrease in laser energy density. Compositional study by X-Ray Reflectivity (XRR) measurement is found to be in agreement with AFM results. Energy dispersive x-ray spectroscopy (EDS) measurements confirm the desired stoichiometry of the samples.
- OSTI ID:
- 22608706
- Journal Information:
- AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
BISMUTH SELENIDES
ENERGY BEAM DEPOSITION
ENERGY DENSITY
GRAIN SIZE
LASER RADIATION
NANOELECTRONICS
PULSED IRRADIATION
PULSES
RAMAN SPECTROSCOPY
REFLECTIVITY
ROUGHNESS
STOICHIOMETRY
SURFACES
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY