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Title: Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film

Abstract

In this work, we investigate the optimum etching of titanium dioxide (TiO{sub 2}) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF{sub 4}/O{sub 2} gases as plasma etchant with ratio of 3:1, three samples of TiO{sub 2} thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF{sub 4} gases with plasma enhancement by O{sub 2} gas able to break the oxide bond of TiO{sub 2} and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.

Authors:
; ; ; ; ; ; ; ;  [1]; ; ;  [1];  [2]
  1. Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia)
  2. (UniMAP), Perlis (Malaysia)
Publication Date:
OSTI Identifier:
22608618
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1733; Journal Issue: 1; Conference: IC-NET 2015: International conference on nano-electronic technology devices and materials 2015, Selangor (Malaysia), 27 Feb - 2 Mar 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CARBON TETRAFLUORIDE; EQUIPMENT; ETCHING; GASES; ION BEAMS; IONS; OPTIMIZATION; PLASMA; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TITANIUM OXIDES

Citation Formats

Adzhri, R., E-mail: adzhri@gmail.com, Fathil, M. F. M., Ruslinda, A. R., Gopinath, Subash C. B., Voon, C. H., Foo, K. L., Nuzaihan, M. N. M., Azman, A. H., Zaki, M., Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my, Hashim, U., Ayub, R. M., and School of Microelectronic Engineering, Universiti Malaysia Perlis. Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film. United States: N. p., 2016. Web. doi:10.1063/1.4948887.
Adzhri, R., E-mail: adzhri@gmail.com, Fathil, M. F. M., Ruslinda, A. R., Gopinath, Subash C. B., Voon, C. H., Foo, K. L., Nuzaihan, M. N. M., Azman, A. H., Zaki, M., Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my, Hashim, U., Ayub, R. M., & School of Microelectronic Engineering, Universiti Malaysia Perlis. Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film. United States. doi:10.1063/1.4948887.
Adzhri, R., E-mail: adzhri@gmail.com, Fathil, M. F. M., Ruslinda, A. R., Gopinath, Subash C. B., Voon, C. H., Foo, K. L., Nuzaihan, M. N. M., Azman, A. H., Zaki, M., Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my, Hashim, U., Ayub, R. M., and School of Microelectronic Engineering, Universiti Malaysia Perlis. Wed . "Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film". United States. doi:10.1063/1.4948887.
@article{osti_22608618,
title = {Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film},
author = {Adzhri, R., E-mail: adzhri@gmail.com and Fathil, M. F. M. and Ruslinda, A. R. and Gopinath, Subash C. B. and Voon, C. H. and Foo, K. L. and Nuzaihan, M. N. M. and Azman, A. H. and Zaki, M. and Arshad, M. K. Md., E-mail: mohd.khairuddin@unimap.edu.my and Hashim, U. and Ayub, R. M. and School of Microelectronic Engineering, Universiti Malaysia Perlis},
abstractNote = {In this work, we investigate the optimum etching of titanium dioxide (TiO{sub 2}) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF{sub 4}/O{sub 2} gases as plasma etchant with ratio of 3:1, three samples of TiO{sub 2} thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF{sub 4} gases with plasma enhancement by O{sub 2} gas able to break the oxide bond of TiO{sub 2} and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.},
doi = {10.1063/1.4948887},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1733,
place = {United States},
year = {Wed Jul 06 00:00:00 EDT 2016},
month = {Wed Jul 06 00:00:00 EDT 2016}
}