Optimization of time on CF{sub 4}/O{sub 2} etchant for inductive couple plasma reactive ion etching of TiO{sub 2} thin film
- Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Perlis (Malaysia)
In this work, we investigate the optimum etching of titanium dioxide (TiO{sub 2}) using inductive couple plasma reactive ion etching (ICP-RIE) on our fabricated devices. By using a combination of CF{sub 4}/O{sub 2} gases as plasma etchant with ratio of 3:1, three samples of TiO{sub 2} thin film were etched with different time duration of 10 s, 15 s and 20 s. The ion bombardment of CF{sub 4} gases with plasma enhancement by O{sub 2} gas able to break the oxide bond of TiO{sub 2} and allow anisotropic etch profile with maximum etch rate of 18.6 nm/s. The sample was characterized by using optical profilometer to determine the depth of etched area and scanning electron microscopy (SEM) for etch profile characterization.
- OSTI ID:
- 22608618
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1733; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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