The correlation of blue shift of photoluminescence and morphology of silicon nanoporous
- Department of Physics, (UPM), Serdang, Selangor 43400 (Malaysia)
- School of Physics, USM, 11800 Penang (Malaysia)
- Department of Computer and Communication Systems Engineering, Universiti Putra Malaysia (UPM), Serdang, Selangor 43400 (Malaysia)
- Department of Physics, Anbar University (Iraq)
Porous silicon with diameters ranging from 6.41 to 7.12 nm were synthesized via electrochemical etching by varied anodization current density in ethanoic solutions containing aqueous hydrofluoric acid up to 65 mA/cm{sup 2}.The luminescence properties of the nanoporous at room temperature were analyzed via photoluminescence spectroscopy. Photoluminescence PL spectra exhibit a broad emission band in the range of 360-700 nm photon energy. The PL spectrum has a blue shift in varied anodization current density; the blue shift incremented as the existing of anodization although the intensity decreased. The current blue shift is owning to alteration of silicon nanocrystal structure at the superficies. The superficial morphology of the PS layers consists of unified and orderly distribution of nanocrystalline Si structures, have high porosity around (93.75%) and high thickness 39.52 µm.
- OSTI ID:
- 22608584
- Journal Information:
- AIP Conference Proceedings, Vol. 1733, Issue 1; Conference: IC-NET 2015: International conference on nano-electronic technology devices and materials 2015, Selangor (Malaysia), 27 Feb - 2 Mar 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ultraviolet and blue photoluminescence from sputter deposited Ge nanocrystals embedded in SiO{sub 2} matrix
Visible light emission from porous silicon examined by photoluminescence and Raman spectroscopy