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Title: Structure determination of a multilayer with an island-like overlayer using hard x-ray photoelectron spectroscopy

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4952935· OSTI ID:22608440
; ; ; ; ;  [1]; ; ;  [2]
  1. Toyota Central R&D Laboratories, Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)
  2. Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)

We use hard X-ray photoelectron spectroscopy (HAXPES) to obtain the surface structure of a multilayer Au/SiO{sub 2}/Si substrate sample with an island-like overlayer. Photoelectron intensities are measured as a function of incident photon energy (PE) and take-off angle (TOA, measured from the sample surface). The Au layer coverage and Au and SiO{sub 2} layer thicknesses are obtained by the PE dependence, and are used for the following TOA analysis. The Au island lateral width in the cross section is obtained by the TOA dependence, including information about surface roughness, in consideration of the island shadowing at small TOAs. In both cases, curve-fitting analysis is conducted. The surface structure, which consists of layer thicknesses, overlayer coverage and island width, is determined nondestructively by a combination of PE and TOA dependent HAXPES measurements.

OSTI ID:
22608440
Journal Information:
AIP Conference Proceedings, Vol. 1741, Issue 1; Conference: SRI2015: 12. international conference on synchrotron radiation instrumentation, New York, NY (United States), 6-10 Jul 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English