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Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4946618· OSTI ID:22606600
; ;  [1]
  1. Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India)

Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

OSTI ID:
22606600
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1728; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English

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