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Near band edge emission characteristics of sputtered nano-crystalline ZnO films

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4946571· OSTI ID:22606568
;  [1]
  1. Department of Physics & Astrophysics, University of Delhi, Delhi 110007 INDIA (India)
Sputtered zinc oxide (ZnO) thin films deposited on unheated glass substrate under different sputtering gas mixtures (Ar+O{sub 2}) have been investigated using X-ray diffraction and photo luminescence spectroscopy. Earlier reported studies on ZnO films prepared by different techniques exhibit either a sharp/broad near band edge (NBE) emission peak depending on the crystalline quality of the film. In the present study zinc oxide films, grown on unheated substrates, are seen to possess a preferred (002) orientation with a microstructure consisting of clustered nano-sized crystallites. The splitting in the near band edge emission (NBE) into three characteristic peaks is attributed to quantum confinement effect, and is observed specifically under an excitation of 270 nm. Deep level emission (DLE) in the range 400 to 700 nm is not observed indicating absence of deep level radiative defects.
OSTI ID:
22606568
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1728; ISSN APCPCS; ISSN 0094-243X
Country of Publication:
United States
Language:
English

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