Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947618· OSTI ID:22606233

Joshi, Shraddha; Acharya, Smita ^[1]

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1. Advanced Materials Research Laboratory, Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur-440033, M.S. India (India)

In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of doped PZT.

• OSTI ID: 22606233
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH ADDITIONS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
DOPED MATERIALS
PERMITTIVITY
PZT
SINTERING
SOL-GEL PROCESS
SYMMETRY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TRIGONAL LATTICES
X RADIATION
X-RAY DIFFRACTION