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Title: Controlled nanopatterning & modifications of materials by energetic ions

Abstract

Compound semiconductors (InP, InAs and GaSb) has been exposed to energetic 3 keV Ar{sup +} ions for a varying fluence range of 10{sup 13} ions/cm{sup 2} to 10{sup 18} ions/cm{sup 2} at room temperature. Morphological modifications of the irradiated surfaces have been investigated by Scanning Tunneling Microscopy (STM) in UHV conditions. It is observed that InP and GaSb have fluence dependent nanopattering e.g. nanoneedle, aligned nanodots, superimposed nanodots ripple like structures while InAs has little fluence dependent behaviour indicating materials dependent growth of features on irradiated surfaces. Moreover, surface roughness and wavelength of the features are also depending on the materials and fluences. The RMS surface roughness has been found to be increased rapidly in the early stage of irradiation followed by slower escalate rate and later tends to saturate indicating influence of the nonlinear processes.

Authors:
 [1]
  1. Amity Institute of Nanotechnology, Amity University, Sector-125, NOIDA (India)
Publication Date:
OSTI Identifier:
22606225
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1731; Journal Issue: 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARGON IONS; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; IRRADIATION; KEV RANGE 01-10; MODIFICATIONS; QUANTUM DOTS; ROUGHNESS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; TAIL IONS; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT; WAVELENGTHS

Citation Formats

Sinha, O. P. Controlled nanopatterning & modifications of materials by energetic ions. United States: N. p., 2016. Web. doi:10.1063/1.4947605.
Sinha, O. P. Controlled nanopatterning & modifications of materials by energetic ions. United States. doi:10.1063/1.4947605.
Sinha, O. P. Mon . "Controlled nanopatterning & modifications of materials by energetic ions". United States. doi:10.1063/1.4947605.
@article{osti_22606225,
title = {Controlled nanopatterning & modifications of materials by energetic ions},
author = {Sinha, O. P.},
abstractNote = {Compound semiconductors (InP, InAs and GaSb) has been exposed to energetic 3 keV Ar{sup +} ions for a varying fluence range of 10{sup 13} ions/cm{sup 2} to 10{sup 18} ions/cm{sup 2} at room temperature. Morphological modifications of the irradiated surfaces have been investigated by Scanning Tunneling Microscopy (STM) in UHV conditions. It is observed that InP and GaSb have fluence dependent nanopattering e.g. nanoneedle, aligned nanodots, superimposed nanodots ripple like structures while InAs has little fluence dependent behaviour indicating materials dependent growth of features on irradiated surfaces. Moreover, surface roughness and wavelength of the features are also depending on the materials and fluences. The RMS surface roughness has been found to be increased rapidly in the early stage of irradiation followed by slower escalate rate and later tends to saturate indicating influence of the nonlinear processes.},
doi = {10.1063/1.4947605},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1731,
place = {United States},
year = {2016},
month = {5}
}