Controlled nanopatterning & modifications of materials by energetic ions
- Amity Institute of Nanotechnology, Amity University, Sector-125, NOIDA (India)
Compound semiconductors (InP, InAs and GaSb) has been exposed to energetic 3 keV Ar{sup +} ions for a varying fluence range of 10{sup 13} ions/cm{sup 2} to 10{sup 18} ions/cm{sup 2} at room temperature. Morphological modifications of the irradiated surfaces have been investigated by Scanning Tunneling Microscopy (STM) in UHV conditions. It is observed that InP and GaSb have fluence dependent nanopattering e.g. nanoneedle, aligned nanodots, superimposed nanodots ripple like structures while InAs has little fluence dependent behaviour indicating materials dependent growth of features on irradiated surfaces. Moreover, surface roughness and wavelength of the features are also depending on the materials and fluences. The RMS surface roughness has been found to be increased rapidly in the early stage of irradiation followed by slower escalate rate and later tends to saturate indicating influence of the nonlinear processes.
- OSTI ID:
- 22606225
- Journal Information:
- AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
IRRADIATION
KEV RANGE 01-10
MODIFICATIONS
QUANTUM DOTS
ROUGHNESS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SURFACES
TAIL IONS
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
WAVELENGTHS