Development and application of InAsP/InP quantum well infrared detector
- Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
InAs{sub x}P{sub 1-x}/InP quantum wells grown using metal organic vapor phase epitaxy are investigated for infrared detector applications. The structural parameters of the QWs are evaluated from high resolution x-ray diffraction. The electronic transition energies measured from surface photo voltage and photoconductivity confirms that these QWs can be used for fabricating IR detectors in the wide wavelength range, i.e. 0.9–1.46 µm by inter-band transitions and 7–18 µm by inter-sub-band transitions. Subsequently the functionality of one such fabricated InAs{sub x}P{sub 1-x}/InPQW detector is verified by measuring the photoluminescence of suitable semiconductor quantum well structure. At the request of all authors of the paper, and with the agreement of the Proceedings Editor, an updated version of this article was published on 24 June 2016. The original version supplied to AIP Publishing contained an error in the Figures 1 and 2 where the right side of the images were cutoff. The error has been corrected in the updated and re-published article.
- OSTI ID:
- 22606224
- Journal Information:
- AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AVAILABILITY
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INFRARED RADIATION
METALS
ORGANOMETALLIC COMPOUNDS
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
QUANTUM WELLS
RESOLUTION
SEMICONDUCTOR MATERIALS
SURFACES
TERNARY ALLOY SYSTEMS
VAPOR PHASE EPITAXY
WAVELENGTHS
X RADIATION
X-RAY DIFFRACTION