Crystal growth at a Bi{sub 2}Sr{sub 2}Ca{sub 1}Cu{sub 2}O{sub 8}/Ag interface
- Ames Lab., IA (United States)
- Argonne National Lab., IL (United States). Energy Technology Div.
Crystal growth at the interface between grains of Bi{sub 2}Sr{sub 2}Ca{sub 1}Cu{sub 2}O{sub 8} and an overlay of 300 nm of Ag has been studied to better understand how new grains grow and why there is such good grain alignment of the c-axis in this part of tape conductors. In 50 torr of oxygen, hillocks grow at temperatures at low as 600 C, and by 800 C have grown to large grains at the interface.
- Research Organization:
- Ames Lab., IA (United States); Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-82; W-31109-ENG-38
- OSTI ID:
- 226041
- Report Number(s):
- ANL/ET/CP--89673; IS-M--852; CONF-960202--22; ON: DE96009057
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
BISMUTH OXIDES
CALCIUM OXIDES
COPPER OXIDES
CRYSTAL GROWTH
EXPERIMENTAL DATA
GRAIN GROWTH
GRAIN ORIENTATION
GRAIN SIZE
INTERFACES
MICROSTRUCTURE
SCANNING ELECTRON MICROSCOPY
SILVER
STRONTIUM OXIDES
SUPERCONDUCTING COMPOSITES
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
BISMUTH OXIDES
CALCIUM OXIDES
COPPER OXIDES
CRYSTAL GROWTH
EXPERIMENTAL DATA
GRAIN GROWTH
GRAIN ORIENTATION
GRAIN SIZE
INTERFACES
MICROSTRUCTURE
SCANNING ELECTRON MICROSCOPY
SILVER
STRONTIUM OXIDES
SUPERCONDUCTING COMPOSITES
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K