An analysis of the growth of silver catalyzed In{sub x}Ga{sub 1−x}As nanowires on Si (100) by metal organic chemical vapor deposition

Journal Article · Sun Aug 28 04:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4961733· OSTI ID:22598835

Sarkar, K.; Palit, M.; Chattopadhyay, S. ^[1]

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1. Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, Kolkata 700098 (India)

A model is proposed here to understand the nucleation of III–V semiconductor nanowires (NW). Whereas the classical nucleation theory is not adequately sufficient in explaining the evolution of the shape of the NWs under different chemical environment such as flow rate or partial pressure of the precursors, the effect of adsorption and desorption mediated growth, and diffusion limited growth are taken into account to explain the morphology and the crystal structure of In{sub x}Ga{sub 1−x}As nanowires (NW) on Silicon (100) substrates grown by a metalorganic chemical vapor deposition technique. It is found that the monolayer nucleus that originates at the triple phase line covers the entire nucleus-substrate (NS) region at a specific level of supersaturation and there are cases when the monolayer covers a certain fraction of the NS interface. When the monolayer covers the total NS interface, NWs grow with perfect cylindrical morphology and whenever a fraction of the interface is covered by the nucleus, the NWs become curved as observed from high resolution transmission electron microscopy images. The supersaturation, i.e., the chemical potential is found to be governed by the concentration of precursors into the molten silver which in the present case is taken as a catalyst. Our study provides new insights into the growth of ternary NWs which will be helpful in understanding the behavior of growth of different semiconducting NWs.

• OSTI ID: 22598835
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 120; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ADSORPTION
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
CRYSTAL STRUCTURE
CYLINDRICAL CONFIGURATION
DESORPTION
IMAGES
INTERFACES
MORPHOLOGY
NANOWIRES
ORGANOMETALLIC COMPOUNDS
PARTIAL PRESSURE
SEMICONDUCTOR MATERIALS
SILICON
SILVER
SUBSTRATES
SUPERSATURATION
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY