The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

Journal Article · Wed Sep 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4961519· OSTI ID:22598820

Siddiqua, Poppy

Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

• OSTI ID: 22598820
• Journal Information: Journal of Applied Physics, Vol. 120, Issue 9; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
CRYSTALS
ELECTRONS
GALLIUM NITRIDES
MONTE CARLO METHOD
SEMICONDUCTOR MATERIALS
SENSITIVITY
STEADY-STATE CONDITIONS
TRANSIENTS
VARIATIONS
ZINC
ZINC SULFIDES