Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

Journal Article · Sun May 15 00:00:00 EDT 2016 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4948597· OSTI ID:22598034

Gottlob, D. M.; Mathieu, C.; Lubin, C. ^[1]; Passicousset, J. ^[1]; Renault, O.; Martinez, E. ^[2]

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1. SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex (France)
2. University Grenoble-Alpes, 38000 Grenoble, France and CEA, LETI, MINATEC Campus, 38054 Grenoble (France)

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

• OSTI ID: 22598034
• Journal Information: Review of Scientific Instruments, Vol. 87, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRIC FIELDS
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
EMISSION SPECTROSCOPY
ENERGY RESOLUTION
EQUIPMENT
FERROELECTRIC MATERIALS
ILLUMINANCE
MAGNETIC PROPERTIES
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
SURFACES
WORK FUNCTIONS
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY