Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Physics, University of Florida, Gainesville, Florida 3261 (United States)
- Department of Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)
- Nanoscience Institute for Medical and Engineering Technology, University of Florida, Gainesville, Florida 32601 (United States)
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 3261 (United States)
In this paper, we report a systematic study that shows how the numerous processing parameters associated with ion implantation (II) and pulsed laser annealing (PLA) can be manipulated to control the quantity and quality of graphene (G), few-layer graphene (FLG), and other carbon nanostructures selectively synthesized in crystalline SiC (c-SiC). Controlled implantations of Si{sup −} plus C{sup −} and Au{sup +} ions in c-SiC showed that both the thickness of the amorphous layer formed by ion damage and the doping effect of the implanted Au enhance the formation of G and FLG during PLA. The relative contributions of the amorphous and doping effects were studied separately, and thermal simulation calculations were used to estimate surface temperatures and to help understand the phase changes occurring during PLA. In addition to the amorphous layer thickness and catalytic doping effects, other enhancement effects were found to depend on other ion species, the annealing environment, PLA fluence and number of pulses, and even laser frequency. Optimum II and PLA conditions are identified and possible mechanisms for selective synthesis of G, FLG, and carbon nanostructures are discussed.
- OSTI ID:
- 22597869
- Journal Information:
- Journal of Applied Physics, Vol. 120, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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