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Title: High temperature Hall measurement setup for thin film characterization

Abstract

Hall measurement using the van der Pauw technique is a common characterization approach that does not require patterning of contacts. Measurements of the Hall voltage and electrical resistivity lead to the product of carrier mobility and carrier concentration (Hall coefficient) which can be decoupled through transport models. Based on the van der Paw method, we have developed an automated setup for Hall measurements from room temperature to ∼500 °C of semiconducting thin films of a wide resistivity range. The resistivity of the film and Hall coefficient is obtained from multiple current-voltage (I-V) measurements performed using a semiconductor parameter analyzer under applied constant “up,” zero, and “down” magnetic field generated with two neodymium permanent magnets. The use of slopes obtained from multiple I-Vs for the three magnetic field conditions offer improved accuracy. Samples are preferred in square shape geometry and can range from 2 mm to 25 mm side length. Example measurements of single-crystal silicon with known doping concentration show the accuracy and reliability of the measurement.

Authors:
; ;  [1]
  1. Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269 (United States)
Publication Date:
OSTI Identifier:
22597811
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 87; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACCURACY; CARRIER MOBILITY; CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GEOMETRY; MAGNETIC FIELDS; MONOCRYSTALS; NEODYMIUM; PERMANENT MAGNETS; RELIABILITY; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSPORT THEORY

Citation Formats

Adnane, L., Gokirmak, A., and Silva, H. High temperature Hall measurement setup for thin film characterization. United States: N. p., 2016. Web. doi:10.1063/1.4959222.
Adnane, L., Gokirmak, A., & Silva, H. High temperature Hall measurement setup for thin film characterization. United States. doi:10.1063/1.4959222.
Adnane, L., Gokirmak, A., and Silva, H. 2016. "High temperature Hall measurement setup for thin film characterization". United States. doi:10.1063/1.4959222.
@article{osti_22597811,
title = {High temperature Hall measurement setup for thin film characterization},
author = {Adnane, L. and Gokirmak, A. and Silva, H.},
abstractNote = {Hall measurement using the van der Pauw technique is a common characterization approach that does not require patterning of contacts. Measurements of the Hall voltage and electrical resistivity lead to the product of carrier mobility and carrier concentration (Hall coefficient) which can be decoupled through transport models. Based on the van der Paw method, we have developed an automated setup for Hall measurements from room temperature to ∼500 °C of semiconducting thin films of a wide resistivity range. The resistivity of the film and Hall coefficient is obtained from multiple current-voltage (I-V) measurements performed using a semiconductor parameter analyzer under applied constant “up,” zero, and “down” magnetic field generated with two neodymium permanent magnets. The use of slopes obtained from multiple I-Vs for the three magnetic field conditions offer improved accuracy. Samples are preferred in square shape geometry and can range from 2 mm to 25 mm side length. Example measurements of single-crystal silicon with known doping concentration show the accuracy and reliability of the measurement.},
doi = {10.1063/1.4959222},
journal = {Review of Scientific Instruments},
number = 7,
volume = 87,
place = {United States},
year = 2016,
month = 7
}
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