High temperature Hall measurement setup for thin film characterization
- Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269 (United States)
Hall measurement using the van der Pauw technique is a common characterization approach that does not require patterning of contacts. Measurements of the Hall voltage and electrical resistivity lead to the product of carrier mobility and carrier concentration (Hall coefficient) which can be decoupled through transport models. Based on the van der Paw method, we have developed an automated setup for Hall measurements from room temperature to ∼500 °C of semiconducting thin films of a wide resistivity range. The resistivity of the film and Hall coefficient is obtained from multiple current-voltage (I-V) measurements performed using a semiconductor parameter analyzer under applied constant “up,” zero, and “down” magnetic field generated with two neodymium permanent magnets. The use of slopes obtained from multiple I-Vs for the three magnetic field conditions offer improved accuracy. Samples are preferred in square shape geometry and can range from 2 mm to 25 mm side length. Example measurements of single-crystal silicon with known doping concentration show the accuracy and reliability of the measurement.
- OSTI ID:
- 22597811
- Journal Information:
- Review of Scientific Instruments, Vol. 87, Issue 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACCURACY
CARRIER MOBILITY
CARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
GEOMETRY
MAGNETIC FIELDS
MONOCRYSTALS
NEODYMIUM
PERMANENT MAGNETS
RELIABILITY
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TRANSPORT THEORY