Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy

Journal Article · Thu Jul 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4958862· OSTI ID:22597729

Riechert, Henning ^[1]; Speck, Florian; Seyller, Thomas ^[2]

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1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
2. Technische Universität Chemnitz, Institut für Physik, Reichenhainer Str. 70, 09126 Chemnitz (Germany)

The efficacy of Ni as a surfactant to improve the crystalline quality of graphene grown directly on dielectric Al{sub 2}O{sub 3}(0001) substrates by molecular beam epitaxy is examined. Simultaneously exposing the substrate to a Ni flux throughout C deposition at 950 °C led to improved charge carrier mobility and a Raman spectrum indicating less structural disorder in the resulting nanocrystalline graphene film. X-ray photoelectron spectroscopy confirmed that no residual Ni could be detected in the film and showed a decrease in the intensity of the defect-related component of the C1s level. Similar improvements were not observed when a lower substrate temperature (850 °C) was used. A close examination of the Raman spectra suggests that Ni reduces the concentration of lattice vacancies in the film, possibly by catalytically assisting adatom incorporation.

• OSTI ID: 22597729
• Journal Information: Journal of Applied Physics, Vol. 120, Issue 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM OXIDES
CARRIER MOBILITY
CHARGE CARRIERS
DIELECTRIC MATERIALS
FILMS
GRAPHENE
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
NANOSTRUCTURES
NICKEL
RAMAN SPECTRA
SUBSTRATES
SURFACTANTS
VACANCIES
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY