Chemical sputtering by H{sub 2}{sup +} and H{sub 3}{sup +} ions during silicon deposition
Journal Article
·
· Journal of Applied Physics
- Debye Institute for Nanomaterials Science-Physics of Devices, Utrecht University, 5656 AE Eindhoven (Netherlands)
- FOM Institute DIFFER-Dutch Institute for Fundamental Energy Research, 5600 HH Eindhoven (Netherlands)
- Department of Applied Physics, Plasma and Materials Processing, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
We investigated chemical sputtering of silicon films by H{sub y}{sup +} ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H{sub 2} inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H{sub 2} inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3–0.4) ± 0.1 Si atom per bombarding H{sub y}{sup +} ion at the grounded electrode and at the powered electrode the yield ranged from (0.4 to 0.65) ± 0.1. Subsequently, we investigated the role of chemical sputtering during PECVD deposition with a series of silane fractions S{sub F} (S{sub F}(%) = [SiH{sub 4}]/[H{sub 2}]*100) ranging from S{sub F} = 0% to 20%. We experimentally observed that the SiH{sub y}{sup +} flux is not proportional to S{sub F} but decreasing from S{sub F} = 3.4% to 20%. This counterintuitive SiH{sub y}{sup +} flux trend was partly explained by an increasing chemical sputtering rate with decreasing S{sub F} and partly by the reaction between H{sub 3}{sup +} and SiH{sub 4} that forms SiH{sub 3}{sup +}.
- OSTI ID:
- 22597688
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 120; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Medium-range order in hydrogenated amorphous silicon measured by fluctuation microscopy
Diagnostics of glow discharges used to produce hydrogenated amorphous silicon films: Annual subcontract report, June 15, 1987--November 30, 1988
Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode
Conference
·
Mon Apr 17 00:00:00 EDT 2000
·
OSTI ID:754474
Diagnostics of glow discharges used to produce hydrogenated amorphous silicon films: Annual subcontract report, June 15, 1987--November 30, 1988
Technical Report
·
Tue Feb 28 23:00:00 EST 1989
·
OSTI ID:6301190
Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode
Journal Article
·
Mon Sep 01 00:00:00 EDT 2008
· Journal of Applied Physics
·
OSTI ID:21182601