Development of broadband X-ray interference lithography large area exposure system
Journal Article
·
· Review of Scientific Instruments
- Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800 (China)
The single-exposure patterned area is about several 10{sup 2} × 10{sup 2} μm{sup 2} which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology.
- OSTI ID:
- 22597123
- Journal Information:
- Review of Scientific Instruments, Vol. 87, Issue 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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