Characterization of background carriers in InAs/GaSb quantum well
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
The origin of the background carriers in an undoped InAs/GaSb quantum well (QW) at temperatures between 40 K and 300 K has been investigated using conventional Hall measurements. It is found that the Hall coefficient changes its sign at around 200 K, indicating that both electrons and holes exist in the quantum well. The two-carrier Hall model is thus adopted to analyze the Hall data, which enables the temperature dependence of the carrier density to be obtained. It is found that considerable numbers of holes exist under low temperature conditions (<40 K) in the InAs/GaSb QW, and the hole density is one to two orders higher than that of the electrons within the experimental temperature range. The origin of these low temperature holes and the temperature-dependent behavior of the carrier density over the entire experimental temperature range are then discussed.
- OSTI ID:
- 22597036
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 9; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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