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Title: Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation

Abstract

We present the results of experimental and theoretical studies of the surface plasmon polariton excitations in heavily doped GaN epitaxial layers. Reflection and emission of radiation in the frequency range of 2–20 THz including the Reststrahlen band were investigated for samples with grating etched on the sample surface, as well as for samples with flat surface. The reflectivity spectrum for p-polarized radiation measured for the sample with the surface-relief grating demonstrates a set of resonances associated with excitations of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. The characteristic features of the reflectivity spectrum, namely, frequencies, amplitudes, and widths of the resonance dips, are well described theoretically by a modified technique of rigorous coupled-wave analysis of Maxwell equations. The emissivity spectra of the samples were measured under epilayer temperature modulation by pulsed electric field. The emissivity spectrum of the sample with surface-relief grating shows emission peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. Theoretical analysis based on the blackbody-like radiation theory well describes the main peculiarities of the observed THz emission.

Authors:
; ; ;  [1]; ;  [2]; ; ;  [3];  [4]
  1. Department of Physics of Semiconductors and Nanoelectronics, Peter the Great St. Petersburg Polytechnic University, St. Petersburg 195251 (Russian Federation)
  2. School of Electrical Engineering, Aalto University, Espoo 02150 (Finland)
  3. Department of Theoretical Physics, Institute of Semiconductor Physics NASU, Kyiv 03028 (Ukraine)
  4. Department of Solid State Electronics, Institute of Physics NASU, Kyiv 03028 (Ukraine)
Publication Date:
OSTI Identifier:
22597004
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 9; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRIC FIELDS; EMISSION SPECTRA; EPITAXY; EXCITATION; FREQUENCY RANGE; GALLIUM NITRIDES; GRATINGS; MAXWELL EQUATIONS; MICROSTRUCTURE; PLASMONS; POLARONS; REFLECTIVITY; SURFACES

Citation Formats

Melentev, G. A., E-mail: gamelen@spbstu.ru, Shalygin, V. A., Vorobjev, L. E., Panevin, V. Yu., Firsov, D. A., Riuttanen, L., Suihkonen, S., Korotyeyev, V. V., Lyaschuk, Yu. M., Kochelap, V. A., and Poroshin, V. N. Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation. United States: N. p., 2016. Web. doi:10.1063/1.4943063.
Melentev, G. A., E-mail: gamelen@spbstu.ru, Shalygin, V. A., Vorobjev, L. E., Panevin, V. Yu., Firsov, D. A., Riuttanen, L., Suihkonen, S., Korotyeyev, V. V., Lyaschuk, Yu. M., Kochelap, V. A., & Poroshin, V. N. Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation. United States. https://doi.org/10.1063/1.4943063
Melentev, G. A., E-mail: gamelen@spbstu.ru, Shalygin, V. A., Vorobjev, L. E., Panevin, V. Yu., Firsov, D. A., Riuttanen, L., Suihkonen, S., Korotyeyev, V. V., Lyaschuk, Yu. M., Kochelap, V. A., and Poroshin, V. N. Mon . "Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation". United States. https://doi.org/10.1063/1.4943063.
@article{osti_22597004,
title = {Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation},
author = {Melentev, G. A., E-mail: gamelen@spbstu.ru and Shalygin, V. A. and Vorobjev, L. E. and Panevin, V. Yu. and Firsov, D. A. and Riuttanen, L. and Suihkonen, S. and Korotyeyev, V. V. and Lyaschuk, Yu. M. and Kochelap, V. A. and Poroshin, V. N.},
abstractNote = {We present the results of experimental and theoretical studies of the surface plasmon polariton excitations in heavily doped GaN epitaxial layers. Reflection and emission of radiation in the frequency range of 2–20 THz including the Reststrahlen band were investigated for samples with grating etched on the sample surface, as well as for samples with flat surface. The reflectivity spectrum for p-polarized radiation measured for the sample with the surface-relief grating demonstrates a set of resonances associated with excitations of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. The characteristic features of the reflectivity spectrum, namely, frequencies, amplitudes, and widths of the resonance dips, are well described theoretically by a modified technique of rigorous coupled-wave analysis of Maxwell equations. The emissivity spectra of the samples were measured under epilayer temperature modulation by pulsed electric field. The emissivity spectrum of the sample with surface-relief grating shows emission peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. Theoretical analysis based on the blackbody-like radiation theory well describes the main peculiarities of the observed THz emission.},
doi = {10.1063/1.4943063},
url = {https://www.osti.gov/biblio/22597004}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 119,
place = {United States},
year = {2016},
month = {3}
}