Erratum: “Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer” [J. Appl. Phys. 119, 105703 (2016)]

Journal Article · Sat May 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4948327· OSTI ID:22596949

Zhao, Yukun; Wang, Shuai; Feng, Lungang; Li, Yufeng; Ding, Wen ^[1]; Yun, Feng ^[1]; Su, Xilin ^[2]; Guo, Maofeng ^[3]; Zhang, Ye ^[3]

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1. Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics and Information Technology, Xi'an Jiaotong University, Xi'an, Shaanxi 710049 (China)
2. Shaanxi Supernova Lighting Technology Co. Ltd, Xi'an, Shaanxi 710075 (China)
3. Solid-State Lighting Engineering Research Center, Xi'an Jiaotong University, Xi'an, Shaanxi 710049 (China)

No abstract prepared.

• OSTI ID: 22596949
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHANNELING
DEPLETION LAYER
ELECTRONS
HOLES
INJECTION
LIGHT EMITTING DIODES