Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al{sub 0.25}Ga{sub 0.75}N

Journal Article · Mon Mar 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4943612· OSTI ID:22596891

Mancini, L.; Hernández-Maldonado, D.; Lefebvre, W.; Blavette, D.; Vurpillot, F. ^[1]; Giraud, E.; Butté, R.; Carlin, J. F.; Grandjean, N. ^[2]

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1. Groupe de Physique des Matériaux, UMR 6634 CNRS, University and INSA of Rouen, Normandie University, 76800 St. Etienne du Rouvray (France)
2. Institute of Physics (IPhys), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

The ternary semiconductor alloy Al{sub 0.25}Ga{sub 0.75}N has been analyzed by means of correlated photoluminescence spectroscopy and atom probe tomography (APT). We find that the composition measured by APT is strongly dependent on the surface electric field, leading to erroneous measurements of the alloy composition at high field, due to the different evaporation behaviors of Al and Ga atoms. After showing how a biased measurement of the alloy content leads to inaccurate predictions on the optical properties of the material, we develop a correction procedure which yields consistent transition and localization energies for the alloy photoluminescence.

• OSTI ID: 22596891
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ALLOYS
ALUMINIUM NITRIDES
ATOMS
CORRECTIONS
ELECTRIC FIELDS
EVAPORATION
FORECASTING
GALLIUM ALLOYS
GALLIUM NITRIDES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACES
TOMOGRAPHY