Dislocation core structures in (0001) InGaN

Journal Article · Mon Mar 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4942847· OSTI ID:22596884

Rhode, S. L.; Sahonta, S. -L.; Kappers, M. J.; McAleese, C.; Humphreys, C. J. ^[1]; Horton, M. K. ^[2]; Haigh, S. J. ^[3]; Pennycook, T. J. ^[4]; Dusane, R. O. ^[5]; Moram, M. A. ^[1]

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1. Department of Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
2. Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom)
3. School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom)
4. SuperSTEM, STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom)
5. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076 (India)

Threading dislocation core structures in c-plane GaN and In{sub x}Ga{sub 1−x}N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In{sub x}Ga{sub 1−x}N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In{sub x}Ga{sub 1−x}N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In{sub x}Ga{sub 1−x}N, consistent with predictions from atomistic Monte Carlo simulations.

• OSTI ID: 22596884
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
COMPUTERIZED SIMULATION
DISLOCATIONS
DISSOCIATION
FILMS
FORECASTING
GALLIUM NITRIDES
INDIUM
INDIUM NITRIDES
LENGTH
MONTE CARLO METHOD
RINGS
SEGREGATION
TRANSMISSION ELECTRON MICROSCOPY