Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation

Journal Article · Mon Mar 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4943497· OSTI ID:22596876

Yoshimura, Satoru; Sugimoto, Satoshi ^[1]; Kiuchi, Masato ^[1]

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1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)

We have proposed an experimental methodology which makes it possible to deposit silicon carbide (SiC) films on Si substrates with a low-energy mass-selected ion beam system using hexamethyldisilane (HMD) as a gas source. In this study, one of the fragment ions produced from HMD, SiCH{sub 4}{sup +}, was mass-selected. The ion energy was approximately 100 eV. Then, the SiCH{sub 4}{sup +} ions were irradiated to a Si(100) substrate. When the temperature of the Si substrate was set at 800 °C during the ion irradiation, the X-ray diffraction and Raman spectroscopy of the substrate following the completion of ion irradiation experiment demonstrated the occurrence of 3C-SiC deposition.

• OSTI ID: 22596876
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APPROXIMATIONS
BEAM PRODUCTION
DEPOSITION
DEPOSITS
FILMS
ION BEAMS
IONS
IRRADIATION
MASS
RAMAN SPECTROSCOPY
SILICON CARBIDES
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
X-RAY DIFFRACTION