Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

Journal Article · Tue Jun 21 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4954289· OSTI ID:22596820

Kraus, A.; Hein, C.; Bremers, H.; Rossow, U.; Hangleiter, A. ^[1]

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1. Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstrasse 2, 38106 Braunschweig (Germany)

The kinetic processes of InN growth using alternating source fluxes with sub-monolayer In pulses in plasma-assisted molecular beam epitaxy have been investigated. Growth at various temperatures reveals the existence of two growth regimes. While growth at low temperatures is solely governed by surface diffusion, a combination of decomposition, desorption, and diffusion becomes decisive at growth temperatures of 470 °C and above. At this critical temperature, the surface morphology changes from a grainy structure to a structure made of huge islands. The formation of those islands is attributed to the development of an indium adlayer, which can be observed via reflection high energy electron diffraction monitoring. Based on the growth experiments conducted at temperatures below T{sub Growth} = 470 °C, an activation energy for diffusion of 0.54 ± 0.02 eV has been determined from the decreasing InN island density. A comparison between growth on metalorganic vapor phase epitaxy GaN templates and pseudo bulk GaN indicates that step edges and dislocations are favorable nucleation sites. Based on the results, we developed a growth model, which describes the main mechanisms of the growth.

• OSTI ID: 22596820
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 23; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
COMPARATIVE EVALUATIONS
CRITICAL TEMPERATURE
DECOMPOSITION
DIFFUSION
DISLOCATIONS
ELECTRON DIFFRACTION
GALLIUM NITRIDES
INDIUM
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
MONITORING
MORPHOLOGY
PULSES
SURFACES
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0400-1000 K
VAPOR PHASE EPITAXY
VAPORS