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Title: Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells

Abstract

We used high hydrostatic pressure to perform photoluminescence measurements on polar ZnO/ZnMgO quantum well structures. Our structure oriented along the c-direction (polar direction) was grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. Due to the intrinsic electric field, which exists in polar wurtzite structure at ambient pressure, we observed a red shift of the emission related to the quantum-confined Stark effect. In the high hydrostatic pressure experiment, we observed a strong decrease of the quantum well pressure coefficients with increased thickness of the quantum wells. Generally, a narrower quantum well gave a higher pressure coefficient, closer to the band-gap pressure coefficient of bulk material 20 meV/GPa for ZnO, while for wider quantum wells it is much lower. We observed a pressure coefficient of 19.4 meV/GPa for a 1.5 nm quantum well, while for an 8 nm quantum well the pressure coefficient was equal to 8.9 meV/GPa only. This is explained by taking into account the pressure-induced increase of the strain in our structure. The strain was calculated taking in to account that in-plane strain is not equal (due to fact that we used a-plane sapphire as a substrate) and the potential distribution in the structure was calculated self-consistently. The pressure induced increase of themore » built-in electric field is the same for all thicknesses of quantum wells, but becomes more pronounced for thicker quantum wells due to the quantum confined Stark effect lowering the pressure coefficients.« less

Authors:
 [1];  [2]; ; ;  [1];  [3];  [4]
  1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)
  2. (Poland)
  3. nextnano GmbH, Südmährenstr. 21, 85586 Poing (Germany)
  4. Institute of Fundamental Technological Research, Polish Academy of Sciences, ul. Pawińskiego, 5b, 02-106 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22596770
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC FIELDS; MAGNESIUM OXIDES; MEV RANGE 10-100; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; PRESSURE COEFFICIENT; PRESSURE RANGE GIGA PA; QUANTUM WELLS; RED SHIFT; SAPPHIRE; STARK EFFECT; STRAINS; SUBSTRATES; THICKNESS; WELL PRESSURE; ZINC OXIDES

Citation Formats

Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl, Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Kaminska, Agata, Suchocki, Andrzej, Kozanecki, Adrian, Birner, Stefan, and Young, Toby D. Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells. United States: N. p., 2016. Web. doi:10.1063/1.4953251.
Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl, Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Kaminska, Agata, Suchocki, Andrzej, Kozanecki, Adrian, Birner, Stefan, & Young, Toby D. Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells. United States. doi:10.1063/1.4953251.
Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl, Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Kaminska, Agata, Suchocki, Andrzej, Kozanecki, Adrian, Birner, Stefan, and Young, Toby D. Tue . "Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells". United States. doi:10.1063/1.4953251.
@article{osti_22596770,
title = {Influence of hydrostatic pressure on the built-in electric field in ZnO/ZnMgO quantum wells},
author = {Teisseyre, Henryk, E-mail: teiss@ifpan.edu.pl and Institute of High Pressure, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw and Kaminska, Agata and Suchocki, Andrzej and Kozanecki, Adrian and Birner, Stefan and Young, Toby D.},
abstractNote = {We used high hydrostatic pressure to perform photoluminescence measurements on polar ZnO/ZnMgO quantum well structures. Our structure oriented along the c-direction (polar direction) was grown by plasma-assisted molecular beam epitaxy on a-plane sapphire. Due to the intrinsic electric field, which exists in polar wurtzite structure at ambient pressure, we observed a red shift of the emission related to the quantum-confined Stark effect. In the high hydrostatic pressure experiment, we observed a strong decrease of the quantum well pressure coefficients with increased thickness of the quantum wells. Generally, a narrower quantum well gave a higher pressure coefficient, closer to the band-gap pressure coefficient of bulk material 20 meV/GPa for ZnO, while for wider quantum wells it is much lower. We observed a pressure coefficient of 19.4 meV/GPa for a 1.5 nm quantum well, while for an 8 nm quantum well the pressure coefficient was equal to 8.9 meV/GPa only. This is explained by taking into account the pressure-induced increase of the strain in our structure. The strain was calculated taking in to account that in-plane strain is not equal (due to fact that we used a-plane sapphire as a substrate) and the potential distribution in the structure was calculated self-consistently. The pressure induced increase of the built-in electric field is the same for all thicknesses of quantum wells, but becomes more pronounced for thicker quantum wells due to the quantum confined Stark effect lowering the pressure coefficients.},
doi = {10.1063/1.4953251},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 21,
volume = 119,
place = {United States},
year = {2016},
month = {6}
}