Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

Journal Article · Tue Jun 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4953352· OSTI ID:22596768

Ceylan, Abdullah ^[1]; Ozcan, Yusuf ^[2]; Orujalipoor, Ilghar ^[3]; Huang, Yen-Chih; Jeng, U-Ser ^[4]; Ide, Semra ^[1]

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1. Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey)
2. Department of Electricity and Energy, Pamukkale University, Denizli (Turkey)
3. Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)
4. National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China)

In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

• OSTI ID: 22596768
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
ATMOSPHERES
CYLINDRICAL CONFIGURATION
DEPTH
DISTRIBUTION
ELECTRON MICROSCOPY
ELECTRONS
FORM FACTORS
GRAZING
LAYERS
MONOCRYSTALS
NANOCOMPOSITES
NANOPARTICLES
NANOSTRUCTURES
SPHERICAL CONFIGURATION
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY SPECTROSCOPY
ZINC OXIDES