Combined analysis of energy band diagram and equivalent circuit on nanocrystal solid

Journal Article · Tue Jun 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4953216· OSTI ID:22596765

Kano, Shinya; Sasaki, Masato; Fujii, Minoru ^[1]

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1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

We investigate a combined analysis of an energy band diagram and an equivalent circuit on nanocrystal (NC) solids. We prepared a flat silicon-NC solid in order to carry out the analysis. An energy band diagram of a NC solid is determined from DC transport properties. Current-voltage characteristics, photocurrent measurements, and conductive atomic force microscopy images indicate that a tunneling transport through a NC solid is dominant. Impedance spectroscopy gives an equivalent circuit: a series of parallel resistor-capacitors corresponding to NC/metal and NC/NC interfaces. The equivalent circuit also provides an evidence that the NC/NC interface mainly dominates the carrier transport through NC solids. Tunneling barriers inside a NC solid can be taken into account in a combined capacitance. Evaluated circuit parameters coincide with simple geometrical models of capacitances. As a result, impedance spectroscopy is also a useful technique to analyze semiconductor NC solids as well as usual DC transport. The analyses provide indispensable information to implement NC solids into actual electronic devices.

• OSTI ID: 22596765
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CAPACITANCE
CAPACITORS
ELECTRONIC EQUIPMENT
ELECTRONIC STRUCTURE
EQUIVALENT CIRCUITS
IMAGES
IMPEDANCE
INTERFACES
NANOSTRUCTURES
PHOTOCURRENTS
RESISTORS
SEMICONDUCTOR MATERIALS
SILICON
TRANSPORT THEORY
TUNNEL EFFECT