Strain dynamics during La{sub 2}O{sub 3}/Lu{sub 2}O{sub 3} superlattice and alloy formation

Journal Article · Tue Jun 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4950875· OSTI ID:22596764

Proessdorf, André; Niehle, Michael; Grosse, Frank; Rodenbach, Peter; Hanke, Michael; Trampert, Achim ^[1]

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1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

The dynamics of strain relaxation and intermixing during molecular beam epitaxy of La{sub 2}O{sub 3} and Lu{sub 2}O{sub 3} superlattices and alloys consisting of both binaries on Si(111) have been studied by real-time in situ grazing incidence x-ray diffraction and high resolution transmission electron microscopy. The presence of both hexagonal and cubic polymorphs of La{sub 2}O{sub 3} influences the epitaxial formation within the superlattice. The process of strain relaxation is closely related to the presence of a (La,Lu){sub 2}O{sub 3} alloy adopting a cubic symmetry. It is formed by interdiffusion of La and Lu atoms reducing internal lattice mismatch within the superlattice. An interface thickness dominated by interdiffusion regions of about 3 monolayers is determined by high-angle annular dark field scanning transmission electron microscopy.

• OSTI ID: 22596764
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
CRYSTAL DEFECTS
ELECTRONS
GRAZING
LANTHANUM OXIDES
LUTETIUM OXIDES
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
RELAXATION
RESOLUTION
SILICON
STRAINS
SUPERLATTICES
SYMMETRY
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION