Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction
- College of Natural Sciences, Can Tho University, 3-2 Road, Can Tho City (Viet Nam)
- Center for Theoretical and Computational Physics, College of Education, Hue University, 34 Le Loi Street, Hue City (Viet Nam)
- Institute of Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi (Viet Nam)
We present a study of the lateral transport of a two-dimensional electron gas (2DEG) in a modulation-doped polar heterojunction (HJ). In contrast to previous studies, we assume that the Coulomb correlation among ionized impurities and among charged dislocations in the HJ is so strong that the 2DEG low-temperature mobility is not limited by impurity and dislocation scattering. The mobility, however, is specified by alloy disorder scattering and combined roughness scattering, which is the total effect induced by both the potential barrier and polarization roughness. The obtained results show that the alloy disorder and combined roughness scattering strongly depend on the alloy content and on the near-interface electron distribution. Our theory is capable of explaining the bell-shaped dependence of the lateral mobility on alloy content observed in AlGaN/GaN and on 2DEG density observed in AlN/GaN, which have not previously been explained.
- OSTI ID:
- 22596752
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ALUMINIUM NITRIDES
COULOMB SCATTERING
DISLOCATIONS
DOPED MATERIALS
ELECTRON GAS
ELECTRONS
GALLIUM NITRIDES
HETEROJUNCTIONS
MOBILITY
MODULATION
POLARIZATION
ROUGHNESS
TEMPERATURE RANGE 0065-0273 K
TRANSPORT THEORY
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS