Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

Journal Article · Sat May 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4952702· OSTI ID:22596738

Stübner, R.; Scheffler, L.; Weber, J. ^[1]

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1. Technische Universität Dresden, 01062 Dresden (Germany)

In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E{sub C}-0.06 eV (E42) and E{sub C}-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH{sub 1AB} configuration, where one H atom is directly bound to carbon in the anti-bonding position.

• OSTI ID: 22596738
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMS
BONDING
CARBON
CHARGE STATES
COMPARATIVE EVALUATIONS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DEPTH
ELECTRIC FIELDS
ELECTRONS
ENTHALPY
ETCHING
HYDROGEN
HYDROGENATION
N-TYPE CONDUCTORS
SILICON