Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template
A kinetically controlled two-step growth process for the formation of an array of dislocation free high mobility InN nanorods (NRs) on GaN nanowall network (NWN) by Molecular Beam Epitaxy is demonstrated here. The epitaxial GaN NWN is formed on c-sapphire under nitrogen rich conditions, and then changing the source from Ga to In at appropriate substrate temperature yields the nucleation of a self assembled spontaneous m-plane side faceted-InN NR. By HRTEM, the NRs are shown to be dislocation-free and have a low band gap value of 0.65 eV. Hall measurements are carried out on a single InN NR along with J-V measurements that yield mobility values as high as ≈4453 cm{sup 2}/V s and the carrier concentration of ≈1.1 × 10{sup 17} cm{sup −3}, which are unprecedented in the literature for comparable InN NR diameters.
- OSTI ID:
- 22596733
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DISLOCATIONS
ELECTRON MOBILITY
ELECTRONS
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
NANOSTRUCTURES
NITROGEN
SAPPHIRE
TRANSMISSION ELECTRON MICROSCOPY