Photosensitivity of p-type black Si field emitter arrays

Journal Article · Thu Apr 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4948328· OSTI ID:22594655

Porshyn, V.; Lützenkirchen-Hecht, D.; Müller, G. ^[1]; Prommesberger, C.; Langer, C.; Schreiner, R. ^[2]

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1. School of Mathematics and Natural Sciences, Physics Department, University of Wuppertal, Wuppertal 42119 (Germany)
2. Faculty of General Sciences and Microsystems Technology, OTH Regensburg, Regensburg 93053 (Germany)

We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission.

• OSTI ID: 22594655
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON EMISSION
ELECTRON SPECTRA
ELECTRONS
ILLUMINANCE
LASERS
PHOTOSENSITIVITY
P-TYPE CONDUCTORS
SATURATION
SILICON
STABILITY
VOLTAGE DROP