Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation

Journal Article · Thu Apr 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4947519· OSTI ID:22594654

Nagase, Takeshi ^[1]; Yamashita, Ryo ^[2]; Lee, Jung-Goo ^[3]

---

1. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan)
3. Powder & Ceramics Division, Korea Institute of Materials Science, 66 Sangnam-dong, Changwon, Kyungsangnam-Do 641-101 (Korea, Republic of)

Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiO{sub x}) interface at 298 K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiO{sub x}) interface, followed by the formation of a Pd{sub 2}Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiO{sub x} and Pd/SiO{sub x} interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes.

• OSTI ID: 22594654
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 16; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
CRYSTALLIZATION
ELECTRON BEAMS
ELECTRONS
EXCITATION
FCC LATTICES
HEATING
INTERFACES
INTERMETALLIC COMPOUNDS
IRRADIATION
KNOCK-ON
MODIFICATIONS
PALLADIUM OXIDES
PALLADIUM SILICIDES
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K